DMP2165UW-13

Active

Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Search across all available documentation for this part.

Active

Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMP2165UW-13

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	335 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs [Max]	90 mOhm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

P-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case
Diodes Inc DMP2165UW-13	20 V	MOSFET (Metal Oxide)	500 mW	SOT-323	12 V	90 mOhm	1 V	1.8 V 4.5 V	335 pF	2.5 A	Surface Mount	-55 °C	150 °C	P-Channel	SC-70 SOT-323

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel Enhancement Mode MOSFET

Technical documentation and resources