BAW78DH6327XTSA1

Infineon Technologies

DIODE GEN PURP 400V 1A SOT89

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Infineon Technologies

DIODE GEN PURP 400V 1A SOT89

Technical Specifications

Parameters and characteristics for this part

Specification	BAW78DH6327XTSA1

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	TO-243AA
Qualification	AEC-Q101
Reverse Recovery Time (trr)	1 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	PG-SOT89
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V

Part	Package / Case	Reverse Recovery Time (trr)	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Current - Average Rectified (Io)	Mounting Type	Technology	Grade	Supplier Device Package	Operating Temperature - Junction	Current - Reverse Leakage @ Vr
Infineon Technologies BAW78DH6327XTSA1	TO-243AA	1 µs	Standard Recovery >500ns	200 mA	400 V	AEC-Q101	1 A	Surface Mount	Standard	Automotive	PG-SOT89	150 °C	1 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 1A Surface Mount PG-SOT89

Technical documentation and resources