Specification	SIA810DJ-T1-GE3

Current - Continuous Drain (Id) (Tc)	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Max)	11.5 nC
Input Capacitance (Ciss) (Max)	400 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6 Dual
Package Name	PowerPAK® SC-70-6 Dual
Power Dissipation (Max)	1.9 W, 6.5 W
Rds On (Max)	53 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SIA810 Series

Part	Package Name	Technology	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) (Tc)	Mounting Type	Vgs (Max)	FET Feature	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)
Vishay Dale SIA810DJ-T1-GE3	PowerPAK® SC-70-6 Dual	MOSFET (Metal Oxide)	1.9 W 6.5 W	PowerPAK® SC-70-6 Dual	4.5 A	Surface Mount	8 V	Schottky Diode (Isolated)	11.5 nC	400 pF	1 V	20 V	N-Channel	4.5 V	1.8 V	-55 °C	150 °C	53 mOhm

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