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2N5401 APP PBFREE

2N5401 APP PBFREE

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Central Semiconductor Corp

BIPOLAR TRANSISTORS - BJT PNP 160VCBO 150VCEO 5.0VEBO 600MA 625MW

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2N5401 APP PBFREE

2N5401 APP PBFREE

Active
Central Semiconductor Corp

BIPOLAR TRANSISTORS - BJT PNP 160VCBO 150VCEO 5.0VEBO 600MA 625MW

Find alt

Description

General part information

2N5401 Series

BIPOLAR TRANSISTORS - BJT PNP 160VCBO 150VCEO 5.0VEBO 600MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification2N5401 APP PBFREE
Current - Collector (Ic) (Max)0.6 mA
Current - Collector Cutoff (Max)50 nA
DC Current Gain (hFE) (Min)60
Frequency - Transition300 MHz
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-92-3 (TO-226AA) Formed Leads, TO-226-3
Package NameTO-92
Power - Max625 mW
Transistor TypePNP
Vce Saturation (Max)500 mV
Voltage - Collector Emitter Breakdown (Max)150 V

Pricing

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CAD

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Documents

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