Specification	SSM6L807R,LF

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Ta)	4 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	3.2 nC, 6.74 nC
Input Capacitance (Ciss) (Max)	480 pF, 310 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	Flat Leads, 6-SMD
Package Name	6-TSOP-F
Power - Max (Ta)	1.4 W
Rds On (Max)	39.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1 V

SSM6L807R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 30 V/-20 V, 4 A/-4 A, 0.0391 Ω@4.5V/0.045 Ω@10V, TSOP6F

Part	Configuration	Technology	Input Capacitance (Ciss) (Max)	Mounting Type	Package Name	Power - Max (Ta)	Rds On (Max)	Gate Charge (Max)	Package / Case	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Operating Temperature	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM6L807R,LF	N P-Channel	MOSFET (Metal Oxide)	310 pF 480 pF	Surface Mount	6-TSOP-F	1.4 W	39.1 mOhm	3.2 nC 6.74 nC	6-SMD Flat Leads	4 A	1 V	150 °C	30 V

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