Trans MOSFET N-CH 40V 100A 4-Pin LFPAK-56 T/R

PSMN1R0-40YLDX

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Nexperia USA Inc.

N-CHANNEL 40 V, 1.1 MΩ, 280 A LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWER-S3 SCHOTTKY-PLUS TECHNOLOGY

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PSMN1R0-40YLDX

Active

Nexperia USA Inc.

N-CHANNEL 40 V, 1.1 MΩ, 280 A LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWER-S3 SCHOTTKY-PLUS TECHNOLOGY

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN1R0-40YLD Series

280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN1R0-40YLDX

Current - Continuous Drain (Id) (Tc)	280 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	127 nC
Input Capacitance (Ciss) (Max)	8845 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	198 W
Rds On (Max)	1.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

PSMN1R0-40YLD Series

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Part	FET Type	Package Name	Gate Charge (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Package / Case	Rds On (Max)
Nexperia USA Inc. PSMN1R0-40YLDX	N-Channel	LFPAK56 Power-SO8	127 nC	20 V	8845 pF	10 V	4.5 V	198 W	Surface Mount	280 A	40 V	MOSFET (Metal Oxide)	-55 °C	150 °C	2.2 V	SC-100 SOT-669	1.1 mOhm