RN2962FE(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

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Obsolete

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Technical Specifications

Parameters and characteristics for this part

Specification	RN2962FE(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	100 mW
Resistor - Emitter Base (R2)	1 kOhm
Supplier Device Package	ES6
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Frequency - Transition	Mounting Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Resistor - Emitter Base (R2)	Transistor Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case
Toshiba Semiconductor and Storage RN2962FE(TE85L,F)	200 MHz	Surface Mount	100 mA	ES6	1 kOhm	2 PNP - Pre-Biased (Dual)	100 nA	300 mV	100 mW	50 V	50	SOT-563 SOT-666
Toshiba Semiconductor and Storage RN2962(TE85L,F)	200 MHz	Surface Mount	100 mA	US6	10 kOhms	2 PNP - Pre-Biased (Dual)	100 nA	300 mV	200 mW	50 V	50	6-TSSOP SC-88 SOT-363

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6

Technical documentation and resources

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