Specification	IPD65R1K4C6ATMA1

Current - Continuous Drain (Id) (Tc)	3.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	10.5 nC
Input Capacitance (Ciss) (Max)	225 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3
Power Dissipation (Max)	28 W
Rds On (Max)	1.4 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPD65R1 Series

Part	Gate Charge (Max)	Package / Case	Vgs (Max)	Mounting Type	Technology	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package Name	Current - Continuous Drain (Id) (Tc)
INFINEON IPD65R1K4CFDATMA1	10 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	Surface Mount	MOSFET (Metal Oxide)	262 pF	-55 °C	150 °C	1.4 Ohm	650 V	4.5 V	N-Channel	10 V	28.4 W	PG-TO252-3	2.8 A
INFINEON IPD65R1K4C6ATMA1	10.5 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	Surface Mount	MOSFET (Metal Oxide)	225 pF	-55 °C	150 °C	1.4 Ohm	650 V	3.5 V	N-Channel	10 V	28 W	PG-TO252-3	3.2 A

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