Description
General part information
ISC0806N Series
OptiMOS™ PD power MOSFETis Infineon’s portfolio targetingUSB-PDandadapter applications. ISC0806NLS in the SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISC0806NLSATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 16 A |
| Current - Continuous Drain (Id) (Tc) | 97 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 49 nC, 49 nC |
| Input Capacitance (Ciss) (Max) | 3400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-7 |
| Power Dissipation (Max) | 96 W, 2.5 W |
| Rds On (Max) | 5.4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.3 V |
Pricing
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CAD
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