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Description

General part information

EMD3 Series

Pre-Biased Bipolar Transistor (BJT) 1 NPN - Pre-Biased, 1 PNP 50V 100mA 250MHz 200mW Surface Mount SOT-563

Technical Specifications

Parameters and characteristics for this part

SpecificationEMD3-TP
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)500 nA
DC Current Gain (hFE) (Min)30
Frequency - Transition250 MHz
Mounting TypeSurface Mount
NPN Count1
Package / CaseSOT-563, SOT-666
Package NameSOT-563
PNP Count1
Power - Max200 mW
Resistor - Base (R1) Resistance10 kOhm
Resistor - Emitter Base (R2)10 kOhms
Transistor ConfigurationPre-Biased
Transistor TypeNPN, PNP
Vce Saturation (Max)300 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

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CAD

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Documents

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