HN1B04FU-GR,LF

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Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A US6

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Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A US6

Technical Specifications

Parameters and characteristics for this part

Specification	HN1B04FU-GR,LF

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	200 mW
Supplier Device Package	US6
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Package / Case	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Operating Temperature	Mounting Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Supplier Device Package
Toshiba Semiconductor and Storage HN1B04FU-GR,LF	50 V	200 hFE	6-TSSOP SC-88 SOT-363	250 mV	150 MHz	125 ¯C	Surface Mount	200 mW	150 mA	1 NPN 1 PNP	100 nA	US6

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General part information

Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 50V 150mA 150MHz 200mW Surface Mount US6

Technical documentation and resources