IXFP20N50P3M

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IXYS

MOSFET N-CH 500V 8A TO220AB

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IXYS

MOSFET N-CH 500V 8A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP20N50P3M

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	58 W
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
IXYS IXFP20N50P3M	5 V	-55 °C	150 °C	300 mOhm	36 nC	TO-220-3	1800 pF	Through Hole	TO-220-3	58 W	N-Channel	500 V	MOSFET (Metal Oxide)	30 V	8 A	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 2.60

General part information

N-Channel 500 V 8A (Tc) 58W (Tc) Through Hole TO-220-3

Technical documentation and resources

No documents available