IXTH20N50D

Obsolete

LITTELFUSE

MOSFETS 20 AMPS 500V 0.33 RDS

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IXTH20N50D

Obsolete

LITTELFUSE

MOSFETS 20 AMPS 500V 0.33 RDS

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXTH20 Series

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH20N50D

Current - Continuous Drain (Id) (Tc)	20 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	Depletion Mode, N-Channel
Gate Charge (Max)	125 nC, 125 nC
Input Capacitance (Ciss) (Max)	2500 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247 (IXTH)
Power Dissipation (Max)	400 W
Rds On (Max)	330 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

IXTH20 Series

DiscMSFT NCh UltrJnctn XClass TO-247AD

Part	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Vgs (Max)	Package Name	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Gate Charge (Max)	FET Type	Input Capacitance (Ciss) (Max)	Mounting Type	Package / Case	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)
LITTELFUSE IXTH20P50P	20 A	500 V	20 V	TO-247 (IXTH)	4 V	-55 °C	150 °C	450 mOhm	103 nC	P-Channel	5120 pF	Through Hole	TO-247-3	460 W	MOSFET (Metal Oxide)	10 V
LITTELFUSE IXTH20N65X	20 A	650 V	30 V	TO-247 (IXTH)	5.5 V	-55 °C	150 °C	210 mOhm	35 nC	N-Channel	1390 pF	Through Hole	TO-247-3	320 W	MOSFET (Metal Oxide)	10 V
LITTELFUSE IXTH20N60	20 A	600 V	20 V	TO-247 (IXTH)	4.5 V	-55 °C	150 °C	350 mOhm	170 nC	N-Channel	4500 pF	Through Hole	TO-247-3	300 W	MOSFET (Metal Oxide)	10 V
LITTELFUSE IXTH20N50D	20 A	500 V	30 V	TO-247 (IXTH)		-55 °C	150 °C	330 mOhm	125 nC 125 nC	Depletion Mode N-Channel	2500 pF	Through Hole	TO-247-3	400 W	MOSFET (Metal Oxide)	10 V
LITTELFUSE IXTH20P50P	20 A	500 V	20 V	TO-247 (IXTH)	4 V	-55 °C	150 °C	450 mOhm	103 nC	P-Channel	5120 pF	Through Hole	TO-247-3	460 W	MOSFET (Metal Oxide)	10 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IXTH20N50D | Datasheet