IAUC120N04S6N010ATMA1

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INFINEON’S IAUC120N04S6N010 IS A 120 V MOSFET FOR POWER MANAGEMENT WITH LOW RDS(ON) AND HIGH EFFICIENCY. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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IAUC120N04S6N010ATMA1

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INFINEON

INFINEON’S IAUC120N04S6N010 IS A 120 V MOSFET FOR POWER MANAGEMENT WITH LOW RDS(ON) AND HIGH EFFICIENCY. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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Description Specifications Series Pricing CAD Documents

Description

General part information

IAUC120 Series

Say goodbye to old technology and unlock new levels of performance with Infineon's latest product,IAUCN04S7N009. Discover the enhanced efficiency and reliability of our newest technology withIAUCN04S7N009

Technical Specifications

Parameters and characteristics for this part

Specification	IAUC120N04S6N010ATMA1

Current - Continuous Drain (Id) (Tc)	150 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	7 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	108 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	6878 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Name	PG-TDSON-8-34
Power Dissipation (Max)	150 W
Qualification	AEC-Q101
Rds On (Max)	1.03 mOhm, 1.03 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

IAUC120 Series

Part	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Qualification	Vgs (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Rds On (Max)	Package Name	Package / Case	Technology	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Grade	Mounting Type	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tj)
INFINEON IAUC120N04S6L012ATMA1	40 V	N-Channel	10 V	4.5 V	AEC-Q101	16 V	4832 pF	2 V	1.21 mOhm	PG-TDSON-8	8-PowerTDFN	MOSFET (Metal Oxide)	80 nC 80 nC	120 A	Automotive	Surface Mount	115 W	-55 °C	175 °C
INFINEON IAUC120N04S6N010ATMA1	40 V	N-Channel	10 V	7 V	AEC-Q101	20 V	6878 pF	3 V	1.03 mOhm 1.03 mOhm	PG-TDSON-8-34	8-PowerTDFN	MOSFET (Metal Oxide)	108 nC	150 A	Automotive	Surface Mount	150 W	-55 °C	175 °C
INFINEON IAUC120N04S6L005ATMA1	40 V	N-Channel	10 V	4.5 V	AEC-Q101	16 V	11203 pF	2 V	0.55 mOhm	PG-TDSON-8-53	8-PowerTDFN	MOSFET (Metal Oxide)	177 nC		Automotive	Surface Mount	187 W	-55 °C	175 °C	120 A
INFINEON IAUC120N04S6N006ATMA1	40 V	N-Channel	10 V	7 V	AEC-Q101	20 V	10117 pF	3 V	0.6 mOhm 0.6 mOhm	PG-TDSON-8-53	8-PowerTDFN	MOSFET (Metal Oxide)	151 nC		Automotive	Surface Mount	187 W	-55 °C	175 °C	120 A
INFINEON IAUC120N06S5N017ATMA1	60 V	N-Channel			AEC-Q101	20 V	6952 pF	3.4 V	1.7 mOhm	PG-TDSON-8-43	8-PowerTDFN	MOSFET (Metal Oxide)	95.9 nC 95.9 nC		Automotive	Surface Mount	167 W	-55 °C	175 °C	120 A
INFINEON IAUC120N04S6N013ATMA1	40 V	N-Channel	10 V	7 V	AEC-Q101	20 V	4260 pF	3 V	1.34 mOhm	PG-TDSON-8	8-PowerTDFN	MOSFET (Metal Oxide)	68 nC	120 A	Automotive	Surface Mount	115 W	-55 °C	175 °C
INFINEON IAUC120N04S6L009ATMA1	40 V	N-Channel	10 V	4.5 V	AEC-Q101	16 V	7806 pF	2 V	0.96 Ohm	PG-TDSON-8-34	8-PowerTDFN	MOSFET (Metal Oxide)	128 nC	150 A	Automotive	Surface Mount	150 W	-55 °C	175 °C

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Technical Data Sheet EN

IAUC120N04S6N010ATMA1 | Datasheet