Specification	SSM6K407TU,LF

Current - Continuous Drain (Id) (Ta)	2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	6 nC
Input Capacitance (Ciss) (Max)	150 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	Flat Leads, 6-SMD
Package Name	UF6
Power Dissipation (Max)	500 mW
Rds On (Max)	300 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

SSM6K407TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 2.0 A, 0.3 Ω@10V, SOT-363F(UF6)

Part	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature	Vgs(th) (Max)	Gate Charge (Max)	Rds On (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Package Name	Technology	Mounting Type	FET Type	Package / Case
Toshiba Semiconductor and Storage SSM6K407TU,LF	4 V	10 V	500 mW	150 pF	150 °C	2 V	6 nC	300 mOhm	20 V	60 V	2 A	UF6	MOSFET (Metal Oxide)	Surface Mount	N-Channel	6-SMD Flat Leads

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