Specification	SI5482DU-T1-E3

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	51 nC
Input Capacitance (Ciss) (Max)	1610 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® ChipFET™ Single
Package Name	PowerPAK® ChipFET™ Single
Power Dissipation (Max)	3.1 W, 31 W
Rds On (Max)	15 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	2 V

SI5482 Series

Part	Package Name	Input Capacitance (Ciss) (Max)	Rds On (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Technology	Vgs(th) (Max)	FET Type	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)
Vishay Dale SI5482DU-T1-GE3	PowerPAK® ChipFET™ Single	1610 pF	15 mOhm	Surface Mount	10 V	4.5 V	12 V	MOSFET (Metal Oxide)	2 V	N-Channel	PowerPAK® ChipFET™ Single	-55 °C	150 °C	12 A	3.1 W 31 W	51 nC	30 V
Vishay Dale SI5482DU-T1-E3	PowerPAK® ChipFET™ Single	1610 pF	15 mOhm	Surface Mount	10 V	4.5 V	12 V	MOSFET (Metal Oxide)	2 V	N-Channel	PowerPAK® ChipFET™ Single	-55 °C	150 °C	12 A	3.1 W 31 W	51 nC	30 V

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