IPI600N25N3GAKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 250V 25A TO262-3

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Obsolete

Infineon Technologies

MOSFET N-CH 250V 25A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI600N25N3GAKSA1

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	2350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	136 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IPI600N25N3GAKSA1	10 V	136 W	60 mOhm	2350 pF	4 V	20 V	29 nC	250 V	MOSFET (Metal Oxide)	PG-TO262-3	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	Through Hole	N-Channel	25 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 25A (Tc) 136W (Tc) Through Hole PG-TO262-3

Technical documentation and resources

No documents available