Specification	IPB80N04S2H4ATMA2

Current - Continuous Drain (Id) (Tc)	80 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	148 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	4400 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3-2
Power Dissipation (Max)	300 W
Qualification	AEC-Q101
Rds On (Max)	3.7 mOhm, 3.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IPB80N Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Grade	Gate Charge (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	FET Type	Rds On (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Package Name	Mounting Type	Technology	Qualification	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) Negative	Vgs (Max) Positive
INFINEON IPB80N06S4L07ATMA1	-55 °C	175 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	75 nC	16 V	60 V	10 V	4.5 V	5680 pF	N-Channel	6.4 mOhm	2.2 V	80 A	PG-TO263-3-2	Surface Mount	MOSFET (Metal Oxide)	AEC-Q101	79 W
INFINEON IPB80N06S405ATMA1	-55 °C	175 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	81 nC	20 V	60 V			6500 pF	N-Channel	5.4 mOhm	4 V	80 A	PG-TO263-3-2	Surface Mount	MOSFET (Metal Oxide)	AEC-Q101	107 W	10 V
INFINEON IPB80N06S209ATMA2	-55 °C	175 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	80 nC 80 nC	20 V	55 V			2360 pF	N-Channel	8.8 mOhm	4 V	80 A	PG-TO263-3-2	Surface Mount	MOSFET (Metal Oxide)	AEC-Q101	190 W	10 V
INFINEON IPB80N06S205ATMA1	-55 °C	175 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	170 nC	20 V	55 V			5110 pF	N-Channel	4.8 mOhm	4 V	80 A	PG-TO263-3-2	Surface Mount	MOSFET (Metal Oxide)	AEC-Q101	300 W	10 V
INFINEON IPB80N04S4L04ATMA1	-55 °C	175 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	60 nC		40 V	10 V	4.5 V	4690 pF	N-Channel	4 mOhm	2.2 V	80 A	PG-TO263-3-2	Surface Mount	MOSFET (Metal Oxide)	AEC-Q101	71 W		-16 V	20 V
INFINEON IPB80N03S4L03ATMA1	-55 °C	175 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	75 nC	16 V	30 V	10 V	4.5 V	5100 pF	N-Channel	3.3 mOhm	2.2 V	80 A	PG-TO263-3-2	Surface Mount	MOSFET (Metal Oxide)	AEC-Q101	94 W
INFINEON IPB80N06S407ATMA1	-55 °C	175 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	56 nC	20 V	60 V			4500 pF	N-Channel	7.1 mOhm	4 V	80 A	PG-TO263-3-2	Surface Mount	MOSFET (Metal Oxide)	AEC-Q101	79 W	10 V
INFINEON IPB80N06S208ATMA1	-55 °C	175 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	96 nC	20 V	55 V			2860 pF 2860 pF	N-Channel	7.7 mOhm	4 V	80 A	PG-TO263-3-2	Surface Mount	MOSFET (Metal Oxide)	AEC-Q101	215 W	10 V
INFINEON IPB80N04S3H4ATMA1	-55 °C	175 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	60 nC	20 V	40 V			3900 pF	N-Channel	4.5 mOhm	4 V	80 A	PG-TO263-3-2	Surface Mount	MOSFET (Metal Oxide)	AEC-Q101	115 W	10 V
INFINEON IPB80N04S2H4ATMA2	-55 °C	175 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	148 nC	20 V	40 V			4400 pF	N-Channel	3.7 mOhm 3.7 mOhm	4 V	80 A	PG-TO263-3-2	Surface Mount	MOSFET (Metal Oxide)	AEC-Q101	300 W	10 V

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IPB80N04S2H4ATMA2 | Datasheet