Specification	SUP50N10-21P-GE3

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	68 nC
Input Capacitance (Ciss) (Max)	2055 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	125 W, 3.1 W
Rds On (Max)	21 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SUP50 Series

Part	Drain to Source Voltage (Vdss)	Technology	Package / Case	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Package Name	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Gate Charge (Max)	Rds On (Max)	Mounting Type	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SUP50N03-5M1P-GE3	30 V	MOSFET (Metal Oxide)	TO-220-3	2.7 W 59.5 W	10 V	4.5 V	2780 pF	TO-220AB	2.5 V	50 A	N-Channel	66 nC 66 nC	5.1 mOhm	Through Hole	20 V	-55 °C	150 °C
Vishay Dale SUP50N10-21P-GE3	100 V	MOSFET (Metal Oxide)	TO-220-3	3.1 W 125 W	10 V	6 V	2055 pF	TO-220AB	4 V	50 A	N-Channel	68 nC	21 mOhm	Through Hole	20 V	-55 °C	150 °C

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