TJ10S04M3L(T6L1,NQ
ActiveToshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -40 V, -10 A, 0.044 Ω@10V, DPAK+
TJ10S04M3L(T6L1,NQ
ActiveToshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -40 V, -10 A, 0.044 Ω@10V, DPAK+
Description
General part information
TJ10S04M3L Series
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -40 V, -10 A, 0.044 Ω@10V, DPAK+
Technical Specifications
Parameters and characteristics for this part
| Specification | TJ10S04M3L(T6L1,NQ |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 10 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 19 nC |
| Input Capacitance (Ciss) (Max) | 930 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPAK+ |
| Power Dissipation (Max) | 27 W |
| Rds On (Max) | 44 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) Negative | -20 V |
| Vgs (Max) Positive | 10 V |
| Vgs(th) (Max) | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
MOSFET Self-Turn-On Phenomenon
Resonant Circuits and Soft Switching
Structures and Characteristics: Power MOSFET Application Notes
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
RC Snubbers for Step-Down Converters
Motor Control (Vacuum Cleaners)
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Reverse Recovery Operation and Destruction of MOSFET Body Diode
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Avalanche energy calculation
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Electrical Characteristics: Power MOSFET Application Notes
MOSFET SPICE model grade
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
MOSFET Secondary Breakdown
TJ10S04M3L Data sheet/Japanese
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Maximum Ratings: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
TJ10S04M3L Data sheet/English
Hints and Tips for Thermal Design part3
Calculating the Temperature of Discrete Semiconductor Devices