PMH950UPEH
ActiveNexperia USA Inc.
DFN0606 MOSFET P CHANNEL ENHANCEMENT 20V 530MA 3-PIN DFN SURFACE MOUNT T/R
PMH950UPEH
ActiveNexperia USA Inc.
DFN0606 MOSFET P CHANNEL ENHANCEMENT 20V 530MA 3-PIN DFN SURFACE MOUNT T/R
Description
General part information
PMH950UPE Series
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | PMH950UPEH |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 530 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) | 36 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 3-XFDFN |
| Package Name | DFN0606-3 |
| Power Dissipation (Max) | 2.2 W, 370 mW |
| Rds On (Max) | 1.4 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 950 mV |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
RS2429_RS2412_DFN0606Combi
High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages
Reflow soldering profile
plastic, leadless ultra small package; 3 terminals; body 0.62 x 0.62 x 0.37 mm
Nexperia package poster
适合移动和便携式设备的 大批量小信号MOSFET， 采用WLCSP和无引脚DFN封装
Thermal performance of DFN packages
DFN0606-3; Reel pack for SMD, 7"; Q3/T4 product orientation