Specification	SI8483DB-T2-E1

Current - Continuous Drain (Id) (Tc)	16 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	65 nC, 65 nC
Input Capacitance (Ciss) (Max)	1840 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UFBGA
Package Length	1.5 mm
Package Name	6-Micro Foot™
Package Width	1 mm
Power Dissipation (Max)	2.77 W, 13 W
Rds On (Max)	26 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max)	800 mV

SI8483 Series

Part	Power Dissipation (Max)	Package / Case	Rds On (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Vgs (Max)	Package Name	Package Length	Package Width	Vgs(th) (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology
Vishay Dale SI8483DB-T2-E1	2.77 W 13 W	6-UFBGA	26 mOhm	12 V	-55 °C	150 °C	65 nC 65 nC	10 V	6-Micro Foot™	1.5 mm	1 mm	800 mV	P-Channel	16 A	1840 pF	Surface Mount	4.5 V	1.5 V	MOSFET (Metal Oxide)

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