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IPD530N15N3GATMA1

IPD530N15N3GATMA1

Active
INFINEON

POWER MOSFET, N CHANNEL, 150 V, 21 A, 0.044 OHM, TO-252 (DPAK), SURFACE MOUNT

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IPD530N15N3GATMA1

IPD530N15N3GATMA1

Active
INFINEON

POWER MOSFET, N CHANNEL, 150 V, 21 A, 0.044 OHM, TO-252 (DPAK), SURFACE MOUNT

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Description

General part information

IPD530 Series

The 150 V OptiMOS™ achieves a reduction in RDS(on)of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD530N15N3GATMA1
Current - Continuous Drain (Id) (Tc)21 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On)8 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)12 nC
Input Capacitance (Ciss) (Max)887 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3
Power Dissipation (Max)68 W
Rds On (Max)53 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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