IXTE250N10

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IXYS

MOSFET N-CH 100V 250A SOT227B

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IXYS

MOSFET N-CH 100V 250A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXTE250N10

Current - Continuous Drain (Id) @ 25°C	250 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	730 W
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)

Part	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Power Dissipation (Max) [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
IXYS IXTE250N10	N-Channel	100 V	SOT-227-4 miniBLOC	Chassis Mount	730 W	MOSFET (Metal Oxide)	250 A	SOT-227B

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 250A 730W Chassis Mount SOT-227B

Technical documentation and resources

No documents available