SSM3K347R,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 38V 2A SOT23F

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Toshiba Semiconductor and Storage

MOSFET N-CH 38V 2A SOT23F

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K347R,LF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	38 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.5 nC
Input Capacitance (Ciss) (Max) @ Vds	86 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	340 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max) [Max]	Operating Temperature	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology
Toshiba Semiconductor and Storage SSM3K347R,LF	SOT-23F	20 V	38 V	2.4 V	4 V	10 V	340 mOhm	Surface Mount	2 A	86 pF	SOT-23-3 Flat Leads	2 W	150 °C	N-Channel	2.5 nC	MOSFET (Metal Oxide)

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General part information

N-Channel 38 V 2A (Ta) 2W (Ta) Surface Mount SOT-23F

Technical documentation and resources