Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | 2N2222AUB1 | 2N2222AHR Series |
|---|---|---|
| - | - | |
| Current - Collector (Ic) (Max) [Max] | 800 mA | 800 mA |
| Current - Collector Cutoff (Max) [Max] | 0.01 µA | 0.01 - 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 | 100 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 200 °C | 200 °C |
| Package / Case | 3-SMD, No Lead | 3-SMD, No Lead, 4-SMD, No Lead |
| Power - Max [Max] | 500 mW | 1 - 500 mW |
| Supplier Device Package | UB | UB |
| Transistor Type | NPN | NPN |
| Vce Saturation (Max) @ Ib, Ic [Max] | 300 mV | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
2N2222AHR Series
Rad-Hard 50 V, 0.8 A NPN transistor
| Part | Package / Case | Operating Temperature | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | Transistor Type | Vce Saturation (Max) @ Ib, Ic [Max] | Power - Max [Max] | Mounting Type | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics 2N2222ARUBTW | |||||||||||
STMicroelectronics 2N2222AUB1 | 3-SMD, No Lead | 200 °C | 100 | UB | 800 mA | NPN | 300 mV | 500 mW | Surface Mount | 0.01 µA | 50 V |
STMicroelectronics 2N2222AUBT | |||||||||||
STMicroelectronics 2N2222ARUBT | |||||||||||
STMicroelectronics 2N2222AUBG | 4-SMD, No Lead | 100 | UB | 800 mA | NPN | 300 mV | 1 W | Surface Mount | 10 nA | 50 V | |
STMicroelectronics 2N2222AUB1 | |||||||||||
STMicroelectronics 2N2222AUB1 | |||||||||||
STMicroelectronics 2N2222ARUBG | |||||||||||
STMicroelectronics 2N2222AUBG |
Description
General part information
2N2222AHR Series
The 2N2222AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).
Qualified as per ESCC 5201/002 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration.
In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Documents
Technical documentation and resources