2N2222AHR Series

Rad-Hard 50 V, 0.8 A NPN transistor

Catalog

Rad-Hard 50 V, 0.8 A NPN transistor

Part	Package / Case	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic [Max]	Power - Max [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
STMicroelectronics 2N2222ARUBTW
STMicroelectronics 2N2222AUB1	3-SMD, No Lead	200 °C	100	UB	800 mA	NPN	300 mV	500 mW	Surface Mount	0.01 µA	50 V
STMicroelectronics 2N2222AUBT
STMicroelectronics 2N2222ARUBT
STMicroelectronics 2N2222AUBG	4-SMD, No Lead		100	UB	800 mA	NPN	300 mV	1 W	Surface Mount	10 nA	50 V
STMicroelectronics 2N2222AUB1
STMicroelectronics 2N2222AUB1
STMicroelectronics 2N2222ARUBG
STMicroelectronics 2N2222AUBG

Catalog

Rad-Hard 50 V, 0.8 A NPN transistor

Description

The 2N2222AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5201/002 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.