Specification	IXFK50N50

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	330 nC
Input Capacitance (Ciss) (Max)	9400 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-264-3, TO-264AA
Package Name	TO-264AA (IXFK)
Power Dissipation (Max)	560 W
Rds On (Max)	80 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IXFK50 Series

Part	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Package / Case	Package Name	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max)
LITTELFUSE IXFK50N50	330 nC	9400 pF	80 mOhm	-55 °C	150 °C	N-Channel	20 V	560 W	10 V	50 A	TO-264-3 TO-264AA	TO-264AA (IXFK)	MOSFET (Metal Oxide)	500 V	Through Hole	4.5 V

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