TPH5900CNH,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 150 V, 0.059 Ω@10V, SOP ADVANCE, U-MOSⅧ-H
TPH5900CNH,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 150 V, 0.059 Ω@10V, SOP ADVANCE, U-MOSⅧ-H
Description
General part information
TPH5900CNH Series
12V - 300V MOSFETs, N-ch MOSFET, 150 V, 0.059 Ω@10V, SOP Advance, U-MOSⅧ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TPH5900CNH,L1Q |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 9 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 7 nC |
| Input Capacitance (Ciss) (Max) | 600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 5 mm |
| Package Name | 8-SOP Advance |
| Package Width | 5 mm |
| Power Dissipation (Max) | 1.6 W, 42 W |
| Rds On (Max) | 59 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
TPH5900CNH,L1Q | Datasheet
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Reverse Recovery Operation and Destruction of MOSFET Body Diode
MOSFET SPICE model grade
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Simplified CFD Model Application Note
Electrical Characteristics: Power MOSFET Application Notes
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Structures and Characteristics: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
MOSFET Self-Turn-On Phenomenon
Selection Guide MOSFETs 2025 Rev1.0
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Calculating the Temperature of Discrete Semiconductor Devices
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
RC Snubbers for Step-Down Converters
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Avalanche energy calculation
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Derating of the MOSFET Safe Operating Area
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Maximum Ratings: Power MOSFET Application Notes
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Motor Control (Vacuum Cleaners)
TPH5900CNH Data sheet/Japanese