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PBSS4260QAZ

PBSS4260QAZ

Active
Nexperia USA Inc.

60 V, 2 A NPN LOW VCESAT (BISS) TRANSISTOR

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PBSS4260QAZ

PBSS4260QAZ

Active
Nexperia USA Inc.

60 V, 2 A NPN LOW VCESAT (BISS) TRANSISTOR

Find alt

Description

General part information

PBSS4260QA Series

NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4260QAZ
Current - Collector (Ic) (Max)2 A
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)40
Frequency - Transition180 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-XDFN Exposed Pad
Package NameDFN1010D-3
Power - Max325 mW
QualificationAEC-Q100
Transistor TypeNPN
Vce Saturation (Max)190 mV, 190 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

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CAD

3D models and CAD resources for this part