Specification	SIHH155N60EF-T1GE3

Current - Continuous Drain (Id) (Tc)	18 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	38 nC
Input Capacitance (Ciss) (Max)	1465 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length	8 mm
Package Name	PowerPAK®
Package Width	8 mm
Power Dissipation (Max)	156 W
Rds On (Max)	155 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

SIHH EF Series

Part	Package Width	Package Name	Package Length	Gate Charge (Max)	Vgs (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max)	FET Type	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Input Capacitance (Ciss) (Max)	Mounting Type
Vishay Dale SIHH14N60EF-T1-GE3	8 mm	PowerPAK®	8 mm	84 nC	30 V	4 V	-55 °C	150 °C	MOSFET (Metal Oxide)	10 V	600 V	266 mOhm	N-Channel	147 W	15 A	8-PowerTDFN	1449 pF 1449 pF	Surface Mount
Vishay Dale SIHH155N60EF-T1GE3	8 mm	PowerPAK®	8 mm	38 nC	30 V	5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	10 V	600 V	155 mOhm	N-Channel	156 W	18 A	8-PowerTDFN	1465 pF	Surface Mount
Vishay Dale SIHH24N65EF-T1-GE3	8 mm	PowerPAK®	8 mm	17 nC	30 V	4 V	-55 °C	150 °C	MOSFET (Metal Oxide)	10 V	650 V	158 mOhm	N-Channel	202 W	23 A	8-PowerTDFN	2780 pF	Surface Mount

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