STGWA20HP65FB2

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STMicroelectronics

TRANSISTOR IGBT CHIP N-CHANNEL 650V 20A 3-PIN TO-247 T/R

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Active

STMicroelectronics

TRANSISTOR IGBT CHIP N-CHANNEL 650V 20A 3-PIN TO-247 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	STGWA20HP65FB2

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	60 A
Gate Charge	56 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	147 W
Reverse Recovery Time (trr)	140 ns
Supplier Device Package	TO-247 Long Leads
Switching Energy	214 µJ
Td (on/off) @ 25°C	78.8 ns
Test Condition	20 A, 400 V, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Switching Energy	IGBT Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Collector Pulsed (Icm)	Package / Case	Test Condition	Power - Max [Max]	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Gate Charge	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C
STMicroelectronics STGWA20HP65FB2	214 µJ	Trench Field Stop	-55 °C	175 ░C	TO-247 Long Leads	60 A	TO-247-3	10 Ohm 15 V 20 A 400 V	147 W	140 ns	40 A	Through Hole	650 V	56 nC	2.1 V	78.8 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 650 V 40 A 147 W Through Hole TO-247 Long Leads

Technical documentation and resources