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DMTH10H032SDVWQ-7

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Diodes Inc

100V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH10H032SDVWQ-7

Active
Diodes Inc

100V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH10H032SDVWQ-7
Configuration2 N-Channel
Current - Continuous Drain (Id) @ 25C6.2 A
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs [Max]8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds544 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power - Max [Max]1.4 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs35 mOhm
Supplier Device PackagePowerDI3333-8 (SWP) (Type UXD)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2000$ 0.38
6000$ 0.36
10000$ 0.34

Description

General part information

DMTH10H032SDVWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: wireless charging, DC-DC converters, and power management.

Documents

Technical documentation and resources