RN4904FE,LF(CT

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Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

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Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

Technical Specifications

Parameters and characteristics for this part

Specification	RN4904FE,LF(CT

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	200 MHz, 250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	100 mW
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	ES6
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Resistor - Base (R1)	Current - Collector Cutoff (Max) [Max]	Grade	Mounting Type	Frequency - Transition	Transistor Type	Package / Case	Vce Saturation (Max) @ Ib, Ic	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Qualification	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage RN4904,LXHF(CT	50 V	US6	47 kOhms	500 nA	Automotive	Surface Mount	200 MHz 250 MHz	1 NPN 1 PNP	6-TSSOP SC-88 SOT-363	300 mV	47000 Ohms	80	AEC-Q101	200 mW	100 mA
Toshiba Semiconductor and Storage RN4904FE,LF(CT	50 V	ES6	47 kOhms	500 nA		Surface Mount	200 MHz 250 MHz	1 NPN 1 PNP	SOT-563 SOT-666	300 mV	47000 Ohms	80		100 mW	100 mA

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General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6

Technical documentation and resources