IXTY02N50D

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IXYS

MOSFET N-CH 500V 200MA TO252

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IXYS

MOSFET N-CH 500V 200MA TO252

Technical Specifications

Parameters and characteristics for this part

Specification	IXTY02N50D

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	500 V
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	120 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	1.1 W, 25 W
Rds On (Max) @ Id, Vgs	30 Ohm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Vgs (Max)	Mounting Type	Package / Case	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)
IXYS IXTY02N50D	20 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.1 W 25 W	TO-252AA	120 pF	-55 °C	150 °C	Depletion Mode	MOSFET (Metal Oxide)	30 Ohm	200 mA	N-Channel	500 V

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General part information

N-Channel 500 V 200mA (Tc) 1.1W (Ta), 25W (Tc) Surface Mount TO-252AA

Technical documentation and resources