IXFP12N50P

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IXYS

MOSFET N-CH 500V 12A TO220AB

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IXYS

MOSFET N-CH 500V 12A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP12N50P

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1830 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max) [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
IXYS IXFP12N50PM	1830 pF	TO-220-3	5.5 V	10 V	30 V	MOSFET (Metal Oxide)	29 nC	N-Channel	50 W	TO-220-3	6 A	-55 °C	150 °C	500 V	Through Hole	500 mOhm
IXYS IXFP12N50P	1830 pF	TO-220-3	5.5 V	10 V	30 V	MOSFET (Metal Oxide)	29 nC	N-Channel		TO-220-3	12 A	-55 °C	150 °C	500 V	Through Hole	500 mOhm	200 W

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General part information

N-Channel 500 V 12A (Tc) 200W (Tc) Through Hole TO-220-3

Technical documentation and resources