BYR16W-1200Q

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WeEn Semiconductors

DIODE GEN PURP 1.2KV 16A TO247-2

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WeEn Semiconductors

DIODE GEN PURP 1.2KV 16A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	BYR16W-1200Q

Current - Average Rectified (Io)	16 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	105 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.7 V

DIODE GEN PURP 1.2KV 16A TO247-2

Part	Reverse Recovery Time (trr)	Technology	Mounting Type	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]
WeEn Semiconductors BYR16W-1200Q	105 ns	Standard	Through Hole	TO-247-2	TO-247-2	2.7 V	200 mA, 500 ns	100 µA	16 A	1.2 kV	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	600	$ 1.37

General part information

Diode 1200 V 16A Through Hole TO-247-2

Technical documentation and resources

No documents available