USB10H

Active

ON Semiconductor

MOSFET 2P-CH 20V 1.9A SSOT6

Search across all available documentation for this part.

Active

ON Semiconductor

MOSFET 2P-CH 20V 1.9A SSOT6

Technical Specifications

Parameters and characteristics for this part

Specification	USB10H

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	1.9 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	4.2 nC
Input Capacitance (Ciss) (Max) @ Vds	441 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	700 mW
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

MOSFET 2P-CH 20V 1.9A SSOT6

Part	Power - Max [Max]	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Configuration	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
ON Semiconductor USB10H	700 mW	MOSFET (Metal Oxide)	170 mOhm	SuperSOT™-6	Logic Level Gate	441 pF	Surface Mount	1.5 V	4.2 nC	2 P-Channel	1.9 A	20 V	-55 °C	150 °C	SOT-23-6 Thin, TSOT-23-6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 1.9A 700mW Surface Mount SuperSOT™-6

Technical documentation and resources