MOSFET 2P-CH 20V 1.9A SSOT6
| Part | Power - Max [Max] | Technology | Rds On (Max) @ Id, Vgs | Supplier Device Package | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Configuration | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor USB10H | 700 mW | MOSFET (Metal Oxide) | 170 mOhm | SuperSOT™-6 | Logic Level Gate | 441 pF | Surface Mount | 1.5 V | 4.2 nC | 2 P-Channel | 1.9 A | 20 V | -55 °C | 150 °C | SOT-23-6 Thin, TSOT-23-6 |