APT30GT60KRG

Obsolete

Microsemi Corporation

IGBT 600V 64A 250W TO220

Search across all available documentation for this part.

Obsolete

Microsemi Corporation

IGBT 600V 64A 250W TO220

Technical Specifications

Parameters and characteristics for this part

Specification	APT30GT60KRG

Current - Collector (Ic) (Max) [Max]	64 A
Current - Collector Pulsed (Icm)	110 A
Gate Charge	145 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	250 W
Supplier Device Package	TO-220 [K]
Switching Energy	525 µJ, 600 µJ
Td (on/off) @ 25°C	12 ns
Td (on/off) @ 25°C	225 ns
Test Condition	15 V, 400 V, 30 A, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Mounting Type	IGBT Type	Current - Collector Pulsed (Icm)	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	Test Condition	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Switching Energy	Package / Case
Microsemi Corporation APT30GT60KRG	Through Hole	NPT	110 A	145 nC	-55 °C	150 °C	12 ns	225 ns	64 A	10 Ohm 15 V 30 A 400 V	TO-220 [K]	600 V	2.5 V	250 W	525 µJ 600 µJ	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 600 V 64 A 250 W Through Hole TO-220 [K]

Technical documentation and resources