BYR5D-1200PJ

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WeEn Semiconductors

DIODE GEN PURP 1.2KV 5A DPAK

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WeEn Semiconductors

DIODE GEN PURP 1.2KV 5A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	BYR5D-1200PJ

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	62 ns
Speed	200 mA, 500 ns
Supplier Device Package	DPAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.2 V

DIODE GEN PURP 1.2KV 5A DPAK

Part	Operating Temperature - Junction [Max]	Technology	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Mounting Type	Current - Average Rectified (Io)	Speed
WeEn Semiconductors BYR5D-1200PJ	175 °C	Standard	62 ns	2.2 V	DPAK (2 Leads + Tab), SC-63, TO-252-3	1.2 kV	50 µA	DPAK	Surface Mount	5 A	200 mA, 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 5A Surface Mount DPAK

Technical documentation and resources

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