1SS361FV,L3F

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Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA VESM

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Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA VESM

Technical Specifications

Parameters and characteristics for this part

Specification	1SS361FV,L3F

Current - Average Rectified (Io) (per Diode)	100 mA
Current - Reverse Leakage @ Vr	500 nA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOT-723
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	VESM
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V

DIODE ARRAY GP 80V 100MA VESM

Part	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Package / Case	Technology	Operating Temperature - Junction	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Reverse Recovery Time (trr)	Supplier Device Package	Speed	Speed
Toshiba Semiconductor and Storage 1SS361FV,L3F	500 nA	100 mA	SOT-723	Standard	150 °C	Surface Mount	80 V	1 Pair Common Cathode	4 ns	VESM	Any Speed	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 80 V 100mA Surface Mount SOT-723

Technical documentation and resources