BSC072N04LDATMA1

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Infineon Technologies

OPTIMOS™ 3 N+N DUAL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 7.2 MOHM;

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Infineon Technologies

OPTIMOS™ 3 N+N DUAL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 7.2 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	BSC072N04LDATMA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	3990 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	65 W
Rds On (Max) @ Id, Vgs [Max]	7.2 mOhm
Supplier Device Package	PG-TDSON-8-4
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2 V

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Power - Max [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Infineon Technologies BSC072N04LDATMA1	2.2 V	7.2 mOhm	8-PowerVDFN	65 W	MOSFET (Metal Oxide)	-55 °C	175 ░C	2 N-Channel (Dual)	40 V	Surface Mount	20 A	Logic Level Gate	52 nC	3990 pF	PG-TDSON-8-4

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General part information

Mosfet Array 40V 20A (Tc) 65W (Tc) Surface Mount PG-TDSON-8-4

Technical documentation and resources