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R6024ENXC7G

R6024ENXC7G

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Rohm Semiconductor

MOSFET SINGLE, 24A, 600V, 74W ROHS COMPLIANT: YES

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R6024ENXC7G

R6024ENXC7G

Active
Rohm Semiconductor

MOSFET SINGLE, 24A, 600V, 74W ROHS COMPLIANT: YES

Find alt

Description

General part information

R6024ENX Series

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Technical Specifications

Parameters and characteristics for this part

SpecificationR6024ENXC7G
Current - Continuous Drain (Id) (Tc)24 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)70 nC
Input Capacitance (Ciss) (Max)1650 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220FM
Power Dissipation (Max)74 W
Rds On (Max)165 mOhm, 165 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Technical Data Sheet EN
Explanation for Marking
How to Use LTspice® Models
About Flammability of Materials
Importance of Probe Calibration When Measuring Power: Deskew
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Precautions When Measuring the Rear of the Package with a Thermocouple
List of Transistor Package Thermal Resistance
What Is Thermal Design
Inner Structure
About Export Regulations
How to Use LTspice® Models: Tips for Improving Convergence
Notes for Calculating Power Consumption:Static Operation
Constitution Materials List
Reliability Test Result
How to Create Symbols for PSpice Models
Moisture Sensitivity Level - Transistors
How to Use the Thermal Resistance and Thermal Characteristics Parameters
What is a Thermal Model? (Transistor)
Compliance of the RoHS directive
ESD Data
Temperature derating method for Safe Operating Area (SOA)
Anti-Whisker formation - Transistors
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Types and Features of Transistors
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Notes for Temperature Measurement Using Thermocouples
MOSFET Gate Resistor Setting for Motor Driving
ROHM Solution Simulator Power Device User's Guide for Inverter
Judgment Criteria of Thermal Evaluation
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Part Explanation
MOSFET Gate Drive Current Setting for Motor Driving
Package Dimensions
Measurement Method and Usage of Thermal Resistance RthJC
Calculation of Power Dissipation in Switching Circuit
θ<sub>JC</sub> and Ψ<sub>JT</sub>
PCB Layout Thermal Design Guide
Basics of Thermal Resistance and Heat Dissipation
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Two-Resistor Model for Thermal Simulation
Method for Monitoring Switching Waveform
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Impedance Characteristics of Bypass Capacitor