IPD33CN10NGBUMA1

Obsolete

Infineon Technologies

MOSFET N-CH 100V 27A TO252-3

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 27A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPD33CN10NGBUMA1

Current - Continuous Drain (Id) @ 25°C	27 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	58 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	FET Type	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IPD33CN10NGBUMA1	33 mOhm	Surface Mount	4 V	MOSFET (Metal Oxide)	20 V	100 V	10 V	24 nC	58 W	N-Channel	PG-TO252-3	DPAK (2 Leads + Tab) SC-63 TO-252-3	1570 pF	27 A	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 27A (Tc) 58W (Tc) Surface Mount PG-TO252-3

Technical documentation and resources

No documents available