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IS46LQ16128AL-062TBLA2

IS46LQ16128AL-062TBLA2

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ISSI, Integrated Silicon Solution Inc

DRAM AUTOMOTIVE (TC: -40 TO +105C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128MX16, 1600MHZ, 200 BALL BGA (10MMX14.5MM, 1.1MM MAX THICKNESS) ROHS

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IS46LQ16128AL-062TBLA2

IS46LQ16128AL-062TBLA2

Active
ISSI, Integrated Silicon Solution Inc

DRAM AUTOMOTIVE (TC: -40 TO +105C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128MX16, 1600MHZ, 200 BALL BGA (10MMX14.5MM, 1.1MM MAX THICKNESS) ROHS

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Description

General part information

IS46LQ16128 Series

SDRAM - Mobile LPDDR4X Memory IC 2Gbit LVSTL 1.6 GHz 3.5 ns 200-TFBGA (10x14.5)

Technical Specifications

Parameters and characteristics for this part

SpecificationIS46LQ16128AL-062TBLA2
Access Time3.5 ns
Clock Frequency1.6 GHz
GradeAutomotive
Memory Depth128 M
Memory FormatDRAM
Memory Interface (Type)LVSTL
Memory Size2 Gbit
Memory TypeVolatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)105 °C
Operating Temperature (Min)-40 °C
Package / Case200-TFBGA
Package Length10 mm
Package Name200-TFBGA
Package Width14.5 mm
QualificationAEC-Q100
TechnologySDRAM - Mobile LPDDR4X
Voltage - Supply (Range 1 Maximum)1.17 V
Voltage - Supply (Range 1 Minimum)1.06 V
Voltage - Supply (Range 2 Maximum)1.95 V
Voltage - Supply (Range 2 Minimum)1.7 V
Write Cycle Time - Page18 ns
Write Cycle Time - Word18 ns

Pricing

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