VN10LFTA

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Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.15A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

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Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.15A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

Technical Specifications

Parameters and characteristics for this part

Specification	VN10LFTA

Current - Continuous Drain (Id) @ 25°C	150 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	60 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	330 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

N-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Supplier Device Package
Diodes Inc VN10LFTA	-55 °C	150 °C	330 mW	Surface Mount	2.5 V	60 pF	150 mA	20 V	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	N-Channel	60 V	10 V	5 V	5 Ohm	SOT-23-3

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General part information

N-Channel Enhancement Mode MOSFET

Technical documentation and resources