TSC5804DCHC5G

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Taiwan Semiconductor Corporation

TRANS NPN 450V 5A TO251

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Taiwan Semiconductor Corporation

TRANS NPN 450V 5A TO251

Technical Specifications

Parameters and characteristics for this part

Specification	TSC5804DCHC5G

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	250 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power - Max [Max]	45 W
Supplier Device Package	TO-251 (IPAK)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	450 V

Part	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max)	Power - Max [Max]	Mounting Type	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Package / Case
Taiwan Semiconductor Corporation TSC5804DCHC5G	150 °C	25	5 A	45 W	Through Hole	NPN	2 V	450 V	TO-251 (IPAK)	250 µA	IPAK TO-251-3 Short Leads TO-251AA
Taiwan Semiconductor Corporation TSC5804DCP ROG	150 °C	25	5 A	45 W	Surface Mount	NPN	2 V	450 V	TO-252 (DPAK)	250 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 450 V 5 A 45 W Through Hole TO-251 (IPAK)

Technical documentation and resources

No documents available