Specification	SUM33N20-60P-E3

Current - Continuous Drain (Id) (Tc)	33 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On)	10 V
Drive Voltage (Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Max)	113 nC
Input Capacitance (Ciss) (Max)	2735 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	156 W, 3.12 W
Rds On (Max)	59 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	4.5 V

SUM33 Series

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Current - Continuous Drain (Id) (Tc)	FET Type	Vgs(th) (Max)	Package / Case	Gate Charge (Max)	Mounting Type	Rds On (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Input Capacitance (Ciss) (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)
Vishay Dale SUM33N20-60P-E3	3.12 W 156 W	10 V	15 V	33 A	N-Channel	4.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	113 nC	Surface Mount	59 mOhm	TO-263 (D2PAK)	-55 °C	175 °C	MOSFET (Metal Oxide)	2735 pF	25 V	200 V

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