Specification	SSM10N961L,ELF

Channel Count	2
Configuration	N-Channel
Configuration - Features	Half Bridge
Current - Continuous Drain (Id) (Ta)	9 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	17.3 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	CSP, 10-XFLGA
Package Name	TCSPAG-341501
Power - Max (Ta)	880 mW
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.3 V

SSM10N961L Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 Common-drain MOSFET, 30 V, 14.0 A, 9.9 mΩ@10 V, TCSPAG-341501

Part	Technology	Channel Count	Configuration - Features	Configuration	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Mounting Type	Gate Charge (Max)	Operating Temperature	Power - Max (Ta)	Package / Case	Package Name	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM10N961L,ELF	MOSFET (Metal Oxide)	2	Half Bridge	N-Channel	9 A	2.3 V	Surface Mount	17.3 nC	150 °C	880 mW	10-XFLGA CSP	TCSPAG-341501	30 V

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